器件名称: STP11NM80
功能描述: N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh?Power MOSFET
文件大小: 582.11KB 共14页
简 介:STP11NM80 - STF11NM80 STB11NM80 - STW11NM80
N-CHANNEL 800V - 0.35 - 11 A TO-220 /FP/D2PAK/TO-247 MDmesh MOSFET
Table 1: General Features
TYPE STP11NM80 STF11NM80 STB11NM80 STW11NM80
■ ■ ■
Figure 1: Package
RDS(on)*Qg 14 nC 14 nC 14 nC 14 nC ID 11 A 11 A 11 A 11 A
VDSS 800 800 800 800 V V V V
RDS(on) < < < < 0.40 0.40 0.40 0.40
3 1 2
1 2
3
■
TYPICAL R DS(on) = 0.35 LOW GATE INPUT RESISTANCE LOW INPUT CAPACITANCE AND GATE CHARGE BEST RDS(on)*Qg IN THE INDUSTRY
TO-220
TO-220FP
3 1
2 1 3
DESCRIPTION The MDmesh associates the Multiple Drain process with the Company’s PowerMesh horizontal layout assuring an oustanding low on-resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
D2PAK
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS The 800 V MDmesh family is very suitable for single switch applications in particular for Flyback and Forward converter topologies and for ignition circuits in the field of lighting.
Table 2: Order Codes
SALES TYPE STP11NM80 STF11NM80 STB11NM80T4 STW11NM80 MARKING P11NM80 F11NM80 B11NM80 W11NM80 PACKAGE TO-220 TO-220FP D2PAK TO-247 PACKAGING TUBE TUBE TAPE & REEL TUBE
Rev. 2 October 2005 1/14
STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
Table 3: Absolute Maximum ratings
Symbol Parameter TO-247 VDS VDGR VGS ID ID IDM ( ) PTOT Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gat……
