器件名称: S9013
功能描述: NPN Silicon Epitaxial Planar Transistor
文件大小: 230.77KB 共4页
简 介:BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z z z z High Collector Current.(IC= 500mA） Complementary To S9012. Excellent HFE Linearity. Power dissipation.(PC=300mW)
Production specification
S9013
Pb
Lead-free
APPLICATIONS
z High Collector Current.
SOT-23
ORDERING INFORMATION
Type No. S9013 Marking J3 Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 40 25 5 500 300 -55~150 Units V V V mA mW ℃
Document number: BL/SSSTC082 Rev.A
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BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE
Production specification
S9013
unless otherwise specified MIN 40 25 5 0.1 0.1 0.1 120 40 0.6 1.2 150 V V MHz 400 TYP MAX UNIT V V V μA μA μA
Test conditions IC=100μA,IE=0 IC=0.1mA,IB=0
B
IE=100μA,IC=0 VCB=40V,IE=0 VCE=20V,IB=0
B
VEB=5V,IC=0 VCE=1V,IC=50mA VCE=1V,IC=500mA IC=500mA, IB= 50mA
B
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency
VCE(sat) VBE(sat) fT
IC=500mA, IB= 50mA
B……
