器件名称: S9013W
功能描述: NPN Silicon Epitaxial Planar Transistor
文件大小: 197.51KB 共4页
简 介:BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z z z z High Collector Current.(IC= 500mA） Complementary To S9012. Excellent HFE Linearity. Power dissipation.(PT=200mW)
Production specification
S9013W
Pb
Lead-free
APPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No. S9013W Marking J3
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value 40 Units V
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous
25 5 500
V V mA
Collector Dissipation Junction and Storage Temperature
200 -55~150
mW ℃
Document number: BL/SSSTF011 Rev.A
www.galaxycn.com 1
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Production specification
S9013W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE Test conditions IC=100μA,IE=0 IC=0.1mA,IB=0 IE=100μA,IC=0 VCB=40V,IE=0 VCE=20V,IB=0 VEB=5V,IC=0 VCE=1V,IC=50mA VCE=1V,IC=500mA IC=500mA, IB= 50mA IC=500mA, IB= 50mA VCE=6V, IC= 20mA f=30MHz 150 120 40 0.6 1.2 V V MHz MIN 40 25 5 0.1 0.1 0.1 400 TYP MAX UNIT V V V μA μA μA
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequ……
