器件名称: S9013M
功能描述: TRANSISTOR
文件大小: 134.44KB 共3页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9013M
TRANSISTOR
C WBFBP-03B
(1.2×1.2×0.5) unit: mm
DESCRIPTION NPN Epitaxial Silicon Transistor FEATURES High Collector Current. (IC=500mA) Complementary to S9012M Excellent hFE linearity. APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) MARKING: J3 C
TOP
1. BASE 2. EMITTER 3. COLLECTOR
B C C BACK
E
E
B
J3
B E MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Parameter Value 40 25 5 500 150 150 -55-150 Units V V V mA mW ℃ ℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 hFE2 VCE(sat) VBE(sat)
unless otherwise
Test conditions
specified)
MIN 40 25 5 0.1 0.1 0.1 120 40 0.6 1.2 150 8 V V MHz pF 400 TYP MAX UNIT V V V
IC= 100A, IE=0 IC=1mA, IB=0 IE=100A IC=0 VCB=40 V,IE=0 VCE=20V,IB=0 VEB= 5V,IC=0 VCE=1V,IC=……
