器件名称: MMBV809
功能描述: Silicon Tuning Diode
文件大小: 102.39KB 共2页
简 介:Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel
1
MMBV809LT1
3
1 ANODE
(
3 CATHODE
2
CASE 318–08, STYLE 8 SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating Reverse Voltage Forward Current Device Dissipation(1) @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 20 20 225 1.8 +125 –55 to +150 Unit Vdc mAdc mW mW/°C °C °C
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (IR=10Adc) Reverse Voltage Leakage Current (V R=15Vdc) Symbol V (BR)R I
R
Min 20 —
Max — 50
Unit Vdc nAdc
C T Diode Capacitance Device Type V R =2.0Vdc,f=1.0MHz pF Min MMBV809LT1
4.5
Q,Figure of Merit V R =3.0Vdc f=500MHz Typ
75
C R ,Capacitance Ratio C 2/ C 8 f=1.0MHz(2) Min
1.8
Typ
5.3
Max
6.1
Max
2.6
1. FR-5 Board 1.0 x 0.75 x 0.62 in. 2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 vdc
I5–1/2
MMBV809LT1
TYPICAL CHARACTERISTICS
10 1000
C T , DIODE CAPACITANCE (pF)
9
Q , FIGURE OF MERIT
8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15
V R =3Vdc T A = 25°C
100
10 10 100 1000
V R , REVERSE VOLTAGE (VOLTS)
f , FREQUENCY ( GHz )
Figure 1. Diode Capacitance
Figure 2. Figure of Merit
R S , SE……
