器件名称: MMBV809LT1
功能描述: Silicon Tuning Diode
文件大小: 37.83KB 共4页
简 介:ON Semiconductort
Silicon Tuning Diode
This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.
MMBV809LT1
ON Semiconductor Preferred Device
Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel
4.5–6.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE
3
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Total Power Dissipation(1) @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range 1. FR5 Board 1.0 x 0.75 x 0.62 in. Symbol VR IF PD TJ Tstg Value 20 20 225 1.8 +125 –55 to +125 Unit Vdc mAdc mW mW/°C °C °C
1 2
CASE 318–08, STYLE 8 SOT–23 (TO–236AB)
1 ANODE
3 CATHODE
DEVICE MARKING
MMBV809LT1 = 5K
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic – All Types Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc) Symbol V(BR)R IR Min 20 — Typ — — Max — 50 Unit Vdc nAdc
Ct, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MMBV809LT1 Min 4.5 Typ 5.3 Max 6.1
Q, Figure of Merit VR = 3.0 Vdc f = 500 MHz Typ 75
CR, Capacitance Ratio C2/C8 f = 1.0 MHz(2) Min 1.8 Max 2.6
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
1
November, 2001 – Rev. 3
Publication Order ……
