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MMBV809LT3G

器件名称: MMBV809LT3G
功能描述: Silicon Tuning Diode
文件大小: 47.05KB    共3页
生产厂商: ONSEMI
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简  介:MMBV809LT1 Preferred Device Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solidstate reliability in replacement of mechanical tuning methods. Features Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel PbFree Packages are Available http://onsemi.com 4.56.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE 1 ANODE 3 CATHODE MAXIMUM RATINGS Rating Reverse Voltage Forward Current Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD 225 1.8 TJ Tstg +125 55 to +125 mW mW/°C °C °C Value 20 20 Unit Vdc mAdc 1 2 3 SOT23 (TO236) CASE 318 STYLE 8 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR5 Board 1.0 x 0.75 x 0.62 in. MARKING DIAGRAM 5K M G G 1 5K = Specific Device Code M = Date Code* G = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBV809LT1 MMBV809LT1G MMBV809LT3 MMBV809LT3G Package SOT23 SOT23 (PbFree) SOT23 Shipping 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape &……
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MMBV809LT3G Silicon Tuning Diode ONSEMI
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