器件名称: BF1100R
功能描述: Dual-gate MOS-FETs
文件大小: 311.53KB 共15页
简 介:BF1100; BF1100R
Dual-gate MOS-FETs
Rev. 02 — 13 November 2007 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales ofce via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specication
Dual-gate MOS-FETs
FEATURES Specially designed for use at 9 to 12 V supply voltage Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement t……
