器件名称: BF1100R
功能描述: Dual-gate MOS-FETs
文件大小: 159.54KB 共14页
简 介:DISCRETE SEMICONDUCTORS
DATA SHEET
BF1100; BF1100R Dual-gate MOS-FETs
Product specication File under Discrete Semiconductors, SC07 1995 Apr 25
Philips Semiconductors
Philips Semiconductors
Product specication
Dual-gate MOS-FETs
FEATURES Specially designed for use at 9 to 12 V supply voltage Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source
BF1100; BF1100R
and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION
handbook, halfpage
d 3
d
handbook, halfpage
4
3
4
g2 g1 1
Top view
g2 g1 2 1
MAM125 - 1
2
MAM124
s,b
Top view
s,b
BF1100 marking code: M56.
BF1100R marking code: M57.
Fig.1 Simplified outline (SOT143) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F 1995 Apr 25 drain current total p……
