器件名称: BF1005S
功能描述: Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
文件大小: 52.96KB 共4页
简 介:BF 1005S
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Q62702-F1665
Pin Configuration 1=S 2=D 3 = G2 4 = G1
Package SOT-143
BF 1005S NZs
Maximum Ratings Parameter Drain-source voltage
Symbol
Value 8 25 10 3 200 - 55 ...+150 150
Unit V mA V mW °C
VDS ID
±I G1/2SM +VG1SE
Continuos drain current Gate 1/gate 2 peak source current Gate 1 (external biasing) Total power dissipation, T S ≤ 76 °C Storage temperature Channel temperature
Ptot T stg T ch
Thermal Resistance Channel - soldering point
Rthchs
≤370
K/W
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
Semiconductor Group Semiconductor Group
11
Au 1998-11-01 -25-1998
BF 1005S
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 13 50 800 -
Unit
V(BR)DS
±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS
12 8 8 -
V
I D = 650 A, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage
±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source current
A nA A mA V
VG1S = 6 V, V G2S = 0 V
Gate 2 source leakage current ±VG2S = 8 V, V G1S = 0 V, V DS = 0 V Drain current
I DSS I DSO VG2S(p)
VDS = 5 V, V……
