器件名称: BF1005SR
功能描述: Silicon N-Channel MOSFET Tetrode
文件大小: 252.41KB 共5页
简 介:BF1005S...
Silicon N-Channel MOSFET Tetrode For low noise, high gain controlled input stages up to 1 GHz Operating voltage 5 V Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF1005S BF1005SR BF1005SW
Maximum Ratings Parameter
Package SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S
Pin Configuration 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 -
Marking NZs NZs NZ
Symbol VDS ID ±IG1/2SM +VG1SE Ptot
Value 8 25 10 3 200 200
Unit V mA V mW
Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1 (external biasing) Total power dissipation TS ≤ 76 °C, BF1005S, BF1005SR TS ≤ 94 °C, BF1005SW Storage temperature Channel temperature
Tstg Tch
-55 ... 150 150
°C
Note: It is not recommended to apply external DC-voltage on Gate 1 in active mode.
1 Feb-18-2004
BF1005S...
Thermal Resistance Parameter Channel - soldering point 1) BF1005S, BF1005SR BF1005SW Symbol
Rthchs ≤ 370 ≤ 280
Value
Unit K/W
Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 650 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , V DS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , V DS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current (selfbiased) VDS = 5 V, VG2S = ……