器件名称: 2SK2315
功能描述: Silicon N-Channel MOS FET
文件大小: 38.88KB 共7页
简 介:2SK2315
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
UPAK 2 1 4
3
D G 1. Gate 2. Drain 3. Source 4. Drain S
2SK2315
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 60 ±20 2 4 2 1 150 –55 to +150
Unit V V A A A W °C °C
Notes 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) 3. Marking is “TY”
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 0.5 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note 1. Pulse Test |yfs| Ciss Coss Crss t on t off 1.5 — — — — — Typ — — — — — 0.4 0.35 1.8 173 85 23 21 85 Max — — ±5 5 1.5 0.6 0.45 — — — — — — Unit V V A A V S pF pF pF ns ns Test Conditions I D = 10 mA, VGS = 0 I G = ±100 A, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.3 A VGS = 3 V*1 ID = 1 A VGS = 4 V*1 ID = 1 A VDS = 10 V*1 VDS =……
