器件名称: 2SK2315TYTR-E
功能描述: Silicon N Channel MOS FET
文件大小: 2100.51KB 共6页
简 介:2SK2315
Silicon N Channel MOS FET
REJ03G1006-0200 (Previous: ADE-208-1354) Rev.2.00 Sep.07,2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
3 2 1 G 4 D 1. Gate 2. Drain 3. Source 4. Drain
S
Note:
Marking is “TY” *UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep. 07, 2005 page 1 of 5
2SK2315
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss ton toff Min 60 ±20 — — 0.5 — — ……