器件名称: 2SK216
功能描述: Silicon N-Channel MOS FET
文件大小: 33.8KB 共6页
简 介:2SK213, 2SK214, 2SK215, 2SK216
Silicon N-Channel MOS FET
Application
High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79
Features
Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Source (Flange) 3. Drain
S
2SK213, 2SK214, 2SK215, 2SK216
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK213 2SK214 2SK215 2SK216 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation VGSS ID I DR Pch Pch* Channel temperature Storage temperature Note: 1. Value at TC = 25°C Tch Tstg
1
Symbol VDSX
Ratings 140 160 180 200 ±15 500 500 1.75 30 150 –45 to +150
Unit V
V mA mA W W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage 2SK213 2SK214 2SK215 2SK216 Gate to source breakdown voltag Gate to source voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Note: 1. Pulse test V(BR)GSS VGS(on) VDS(sat) |yfs| Ciss Crss Symbol V(BR)DSX Min 140 160 180 200 ±15 0.2 — 20 — — Typ — — — — — — — 40 90 2.2 Max — — — — — 1.5 2.0 — — — Unit V V V V V V V mS pF pF I G = ±10 A, VDS = 0 I D = 10 mA, VDS = 10 V *1 I D = 10 mA, VGD = 0 *1 I D = 10 mA, VDS = 20 V *1 I D = 10 mA, VDS = 10 V, f = 1 MHz Test conditions I D = 1 mA, VGS = –2 V
2
2SK213, 2SK214, 2SK215, 2SK216
Power vs. T……
