器件名称: 2SK2162
功能描述: N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
文件大小: 120.93KB 共3页
简 介:2SK2162
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
2SK2162
Audio-Frequency Power Amplifier Applications
High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 0.7 S (typ.) Complementary to 2SJ338 Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Gate-source voltage Drain current Power dissipation (Tc = 25°C) Channel temperature Storage temperature range (Note 1) Symbol VDSS VGSS ID PD Tch Tstg Rating 180 ±20 1 20 150 55~150 Unit V V A W °C °C
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC JEITA TOSHIBA
― SC-64 2-7B1B
Weight: 0.36 g (typ.)
JEDEC JEITA TOSHIBA
― ― 2-7J1B
Weight: 0.36 g (typ.)
1
2006-11-21
2SK2162
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Drain-source breakdown voltage Gate-source cutoff current Drain-source saturation voltage For……
