器件名称: 2SK1628
功能描述: Silicon N Channel MOS FET
文件大小: 82.79KB 共7页
简 介:2SK1402, 2SK1402A
Silicon N Channel MOS FET
REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G
1. Gate 2. Drain (Flange) 3. Source S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1402, 2SK1402A
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C 2SK1402 2SK1402A VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg
1
Symbol VDSS
Ratings 600 650 ±30 4 16 4 50 150 –55 to +150
Unit V V A A A W
°C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage 2SK1402 2SK1402A Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 600 650 ±30 — — 2.0 — — 2.2 — — — — — — — — — Typ — — — — — — 1.8 2.0 3.5 600 140 25 8 30 60 35 0.9 300 Max — — — ±10 250 3.0 2.4 2.6 — — — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 VDS = 550 V, VGS = 0 ID = 1 mA, VDS = 10 V 3 ID = 2 A, VGS = 10 V * ID = 2 A, VDS = 10 V * VDS = 10 V, ……
