器件名称: 2SK1628
功能描述: Silicon N-Channel MOS FET
文件大小: 34.9KB 共6页
简 介:2SK1628, 2SK1629
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3PL
D G
1
2
3
S
1. Gate 2. Drain 3. Source
2SK1628, 2SK1629
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1628 2SK1629 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at TC = 25°C VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Symbol VDSS
Ratings 450 500 ±30 30 120 30 200 150 –55 to +150
Unit V
V A A A W °C °C
2
2SK1628, 2SK1629
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Symbol 2SK1628 V(BR)DSS 2SK1629 V(BR)GSS I GSS Min 450 500 ±30 — — — — — — ±10 250 V A A I G = ±100 A, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 12 — — — — — — — — — — 0.20 0.22 20 2800 780 90 32 140 200 100 1.1 600 3.0 0.25 0.27 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 30 A, VGS = 0 I F = 30 A, VGS = 0, diF/dt = 100 A/s I D = 15 A, VGS = 10 V, RL = 2 I D = 15 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 15 A, VGS = 10 V *1 Typ — Max — Unit V Test conditions I D = 10 mA, VGS = 0
Gate to source breakdown v……
