器件名称: 2SJ486
功能描述: Silicon P Channel MOS FET
文件大小: 79.55KB 共7页
简 介:2SJ486
Silicon P Channel MOS FET
REJ03G0869-0300 (Previous: ADE-208-512A) Rev.3.00 Sep 07, 2005
Description
Low frequency power switching
Features
Low on-resistance RDS (on) = 0.5 typ. (at VGS = –4 V, ID = –100 mA) 2.5 V gate drive devices. Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
D
3 1 2 G
1. Source 2. Gate 3. Drain
S
Note: Marking is “ZU–”.
Rev.3.00 Sep 07, 2005 page 1 of 6
2SJ486
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 100 s, duty cycle ≤ 10% Symbol VDSS VGSS ID ID (pulse) Pch
Note 1
Value –30 ±10 –0.3 –0.6 150 150 –55 to +150
Unit V V A A mW °C °C
Tch Tstg
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Note: 2. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Min –30 ±10 — — –0.5 — — 0.4 — — — — — — — Typ — — — — — 0.5 0.7 0.65 45 76 5.4 120 340 850 550 Max — — –1.0 ±5.0 –1.5 0.65 1.2 — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns T……