器件名称: 2SJ486
功能描述: Silicon P Channel MOS FET Low FrequencyPower Switching
文件大小: 41.31KB 共8页
简 介:2SJ486
Silicon P Channel MOS FET Low FrequencyPower Switching
ADE-208-512 A 2nd. Edition Features
Low on-resistance R DS(on) = 0.5 typ. (at V GS = –4V, ID = –100 mA) 2.5V gate drive devices. Small package (MPAK).
Outline
MPAK
3 1
D
2
G
1. Source 2. Gate 3. Drain
S
2SJ486
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 s, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg
1
Ratings –30 ±10 –0.3 –0.6 150 150 –55 to +150
Unit V V A A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±10 — — –0.5 — Typ — — — — — 0.5 Max — — –1.0 ±5.0 –1.5 0.65 Unit V V A A V S Test Conditions I D = –10A, VGS = 0 I G = ±100A, VDS = 0 VDS = –30 V, VGS = 0 VGS = ±6.5V, VDS = 0 I D = –10A, VDS = –5V I D = –100mA VGS = –4V*1 — 0.7 1.2 I D = –40mA VGS = –2.5V*1 Forward transfer admittance |yfs| Ciss Coss 0.4 0.65 — I D = –100mA VDS = –10V*1 Input capacitance Output capacitance — — — — — — — 45 76 5.4 120 340 850 550 — — — — — — — pF pF pF ns ns ns ns VDS = –10V VGS = 0 f = 1MHz VGS = –4V I D = –150mA RL = 66.6
Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance RDS(on)
Reverse transfer capacitance Crss Turn-on delay……
