器件名称: 2SJ484
功能描述: Silicon P-Channel MOS FET High Speed Power Switching
文件大小: 43.6KB 共9页
简 介:2SJ484
Silicon P-Channel MOS FET High Speed Power Switching
ADE-208-501 A 2nd. Edition Features
Low on-resistance R DS(on) = 0.18 typ. (at V GS = –10V, ID = –1A) Low drive current High speed switching 4V gate drive devices.
Outline
UPAK 2 3 1
4 D
G
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ484
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings –30 ±20 –2 –4 –2 1 150 –55 to +150
Unit V V A A A W °C °C
Notes: 1. PW ≤ 100 s, duty cycle ≤ 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm)
2
2SJ484
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min –30 ±20 — — –1.0 — — 1.2 — — — — — — — — — Typ — — — — — 0.18 0.3 2.0 230 140 50 10 30 35 30 –0.95 60 Max — — –10 ±10 –2.0 0.23 0.45 — — — — — — — — — — Unit V V A A V S pF pF pF ns ns ns ns V ns I F = –2A, VGS = 0 I F = –2A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = –10mA, VGS = 0 I G = ±100A, VDS = 0 VDS = –30 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –1A, VGS = –10V*1 I D = –1A, VGS = –4V*1 I D = –1A, VDS = –10V*1 VDS = –10V VGS = 0 f = 1MHz I D = –1A, RL = 30 VGS = –10V
Gate to source cu……
