器件名称: 2SJ484WYTL-E
功能描述: Silicon P Channel MOS FET
文件大小: 79.21KB 共7页
简 介:2SJ484
Silicon P Channel MOS FET
REJ03G0868-0300 (Previous: ADE-208-501A) Rev.3.00 Sep 07, 2005
Description
High speed power switching
Features
Low on-resistance RDS (on) = 0.18 typ. (at VGS = –10 V, ID = –1 A) Low drive current High speed switching 4 V gate drive devices.
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
D
3
2
1 G 4
1. Gate 2. Drain 3. Source 4. Drain
S
Note: Marking is “WY”. *UPAK is a trademark of Renesas Technology Corp.
Rev.3.00 Sep 07, 2005 page 1 of 6
2SJ484
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value –30 ±20 –2 –4 –2 1 150 –55 to +150
Unit V V A A A W °C °C
Pch Tch
Note 2
Storage temperature Tstg Notes: 1. PW ≤ 100 s, duty cycle ≤ 10% 2. When using the aluminium ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) ……
