器件名称: 3DK2222A
功能描述: TRANSISTOR(NPN )
文件大小: 111.33KB 共2页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92
3DK2222A
FEATURE Power dissipation PCM : 0.625
Plastic-Encapsulate Transistors
TO-92
TRANSISTOR(NPN )
1. EMITTER 2. BASE
W(Tamb=25℃)
3. COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Value 75 40 6 600 625 150 -55-150
1 2 3
Units V V V mA mW ℃ ℃
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Junction and Storage Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Storage time Transition frequency VCE(sat)(1) VCE(sat)(2) VBE(sat) tstg
unless
Test
otherwise
specified)
MIN 75 40 6 10 10 10 100 40 42 0.6 0.3 1.2 225 300 V V V ns MHz 300 MAX UNIT V V V nA nA nA
conditions
Ic= 10uA , IE=0 IC= 10 mA , IB=0 IE= 10uA, IC=0 VCB= 60 V , IE=0 VCE= 60 V , VEB(OFF)=3V VEB= 3 V , VCE=10 V, VCE=10 V, VCE=10 V, IC=0 IC= 150mA IC= 0.1mA IC= 500mA
IC= 500 mA, IB= 50 mA IC= 150 mA, IB= 15 mA IC= 500 mA, IB= 50 mA VCC=30V, IC=150mA, ……
