器件名称: 3DK2222A-SOT-23
功能描述: TRANSISTOR ( NPN )
文件大小: 932.59KB 共3页
简 介:JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
3DK2222A
FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1)
TRANSISTOR ( NPN )
SOT-23
1. BASE 2.EMITTER 3.COLLECTOR
MARKING: 1P1
MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature unless
Test
Value 75 40 6 600 300 -55to+150 otherwise specified）
MIN 75 40 6 TYP
Units V V V mA mW ℃
MAX UNIT V V V 0.1 0.1 0.1
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO HFE(1) DC current gain HFE(2) HFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time VCE(sat) VBE(sat)
conditions IE=0
IC= 10μA，
IC= 10mA， IB=0 IE=10μA， IC=0 VCB=70 V , IE=0 VCE=60V , VEB= 3V , VBE(off)=3V IC=0
μA μA μA
VCE=10V, IC= 150mA VCE=10V, IC= 0.1mA VCE=10V, IC= 500mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA VCE=20V, IC= 20mA
100 40 42
300
0.6 0.3 1.2 300 10 25 225 60
V V MHz nS nS nS nS
fT td tr tS tf
f=100MHz
VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA……
