器件名称: 2STW1695
功能描述: High power PNP epitaxial planar bipolar transistor
文件大小: 192.12KB 共9页
简 介:2STW1695
High power PNP epitaxial planar bipolar transistor
General features
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High breakdown voltage VCEO = -140V Complementary to 2STW4468 Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive
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Applications
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TO-247
Audio power amplifier
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number 2STW1695 Marking 2STW1695 Package TO-247 Packing Tube
February 2007
Rev 3
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2STW1695
Electrical ratings
Table 1.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value -140 -140 -6 -10 -20 100 -65 to 150 150 Unit V V V A A W °C °C
Table 2.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ________________max Value 1.25 Unit °C/W
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2STW1695
Electrical characteristics
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Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitte……
