器件名称: 2STW1695_08
功能描述: High power PNP epitaxial planar bipolar transistor
文件大小: 171.48KB 共9页
简 介:2STW1695
High power PNP epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = -140 V Complementary to 2STW4468 Typical ft = 20 MHz Fully characterized at 125 oC
Applications
3
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Audio power amplifier TO-247
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Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage. Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 2STW1695 Package TO-247 Packaging Tube
Order code 2STW1695
October 2008
Rev 4
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Electrical ratings
2STW1695
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Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -140 -140 -6 -10 -20 100 -65 to 150 150 Unit V V V A A W °C °C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case ______max Value 1.25 Unit °C/W
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2STW1695
Electrical characteristics
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Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO V(BR)CEO V(BR)CBO V(BR)EBO(1) VCE(sat) (1) VBE (1) hFE fT CCBO
Electrical characteristics
Parameter Co……
