器件名称: 2STW1693
功能描述: High power PNP epitaxial planar bipolar transistor
文件大小: 213.31KB 共10页
简 介:2STW1693
High power PNP epitaxial planar bipolar transistor
Features
■ ■ ■ ■
High breakdown voltage VCEO = -80V Complementary to 2STW4466 Typical ft = 20MHz Fully characterized at 125 oC
Applications
■
3 2 1
Audio power amplifier TO-247
Description
The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCESAT behaviour. Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking 2STW1693 Package TO-247 Packaging Tube
Order code 2STW1693
October 2007
Rev 1
1/10
www.st.com 10
2STW1693
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10
2STW1693
Electrical ratings
1
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Electrical ratings
Absolute maximum rating
Parameter Collector-emitter voltage (IE = 0) Collector-emitter voltage (IB = 0) Collector-b……
