器件名称: 2STW1693_08
功能描述: High power PNP epitaxial planar bipolar transistor
文件大小: 152.18KB 共9页
简 介:2STW1693
High power PNP epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO = -80 V Complementary to 2STW4466 Typical ft = 20 MHz Fully characterized at 125 oC
Applications
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3 2 1
Audio power amplifier TO-247
Description
The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40W to 70W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking 2STW1693 Package TO-247 Packaging Tube
Order code 2STW1693
October 2008
Rev 2
1/9
www.st.com 9
Electrical ratings
2STW1693
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Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC ICM PTOT Tstg TJ
Absolute maximum rating
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Total dissipation at Tc = 25 °C Storage temperature Max. operating junction temperature Value -100 -80 -6 -6 -12 60 -65 to 150 150 Unit V V V A A W °C °C
Table 3.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case _____________max Value 2.08 Unit °C/W
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2STW1693
Electrical characteristics
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Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Symbol ICBO IEBO V(BR)EBO V(BR)CBO V(BR)CEO VCE(sat) (1) VBE (1) hFE fT CCBO
Electrical characteristics
Par……
