器件名称: 2SD1366
功能描述: Silicon NPN Epitaxial
文件大小: 31.36KB 共6页
简 介:2SC4702
Silicon NPN Epitaxial
Application
High voltage amplifier
Features
High breakdown voltage VCEO = 300 V Small Cob Cob = 1.5 pF Typ.
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC4702
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 50 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “XV–”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE fT Cob Min 300 300 5 — — 60 — — Typ — — — — — — 80 1.5 Max — — — 0.1 0.5 150 — — MHz pF Unit V V V A V Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 250 V, IE = 0 I C = 30 mA, IB = 3 mA VCE = 6 V, IC = 2 mA VCE = 6 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz
2
2SC4702
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) Typical Output Characteristics 10 100 80 Pulse Test 60 50 6 40 4 30 20 IB = 10 A 0 50 100 Ambient Temperature Ta (°C) 150 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V)
8
100
50
2
Typical Tran……
