器件名称: 2SD1366A
功能描述: Silicon NPN Epitaxial
文件大小: 24.9KB 共5页
简 介:2SD1366A
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SD1366A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg
2 1
Ratings 30 25 5 1 1.5 1 150 –55 to +150
Unit V V V A A W °C °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 25 5 — —
1
Typ — — — —
Max — — — 0.1 0.1
Unit V V V A A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VEB = 4 V, IC = 0 VCE = 2 V, IC = 0.5 A, Pulse
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark hFE AC 85 to 170 AD 120 to 240 V(BR)EBO I CBO I EBO hFE*
85 — — — —
— 0.15 0.9 240 22
240 0.3 1.0 — — V V MHz pF
VCE(sat) VBE(sat) fT Cob
I C = 0.8 A, IB = 0.08 A, Pulse I C = 0.8 A, IB = 0.08 A, Pulse VCE = 2 V, IC = 0.5 A, Pulse VCB = 10 V, IE = 0, f = 1 MHz
1. The 2SD1366A is gro……
