器件名称: 2SD1306
功能描述: Silicon NPN Epitaxial
文件大小: 70.95KB 共6页
简 介:2SD1306
Silicon NPN Epitaxial
REJ03G0784-0200 (Previous ADE-208-1144) Rev.2.00 Aug.10.2005
Application
Low frequency amplifier, Muting
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 15 5 0.7 150 150 –55 to +150 Unit V V V A mW °C °C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1306
Electrical Characteristics
(Ta = 25°C)
Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO DC current transfer ratio hFE*1 Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Gain bandwidth product fT Notes: 1. The 2SD1306 is grouped by hFE as follows. 2. Pulse test Grade D E Mark ND NE hFE 250 to 500 400 to 800 Min 30 15 5 — 250 — — — Typ — — — — — — — 250 Max — — — 1.0 800 1.0 0.5 — Unit V V V A V V MHz Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 150 mA*2 VCE = 1 V, IC = 150 mA*2 IC = 500 mA, IB = 50 mA*2 VCE = 1 V, IC = 150 mA*2
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD1306
Main Characteristics
Maximum Collector Dissipation Curve Typical Output Characteristics
10
Collector Power Dis……
