器件名称: 2SD1306
功能描述: Silicon NPN Epitaxial
文件大小: 27.53KB 共5页
简 介:2SD1306
Silicon NPN Epitaxial
ADE-208-1144 (Z) 1st. Edition Mar. 2001 Application
Low frequency amplifier, Muting
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SD1306
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 15 5 0.7 150 150 –55 to +150 Unit V V V A mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 15 5 —
1
Typ — — — — — — — 250
Max — — — 1.0 800 1.0 0.5 —
Unit V V V A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 150 mA*2 VCE = 1 V, IC = 150 mA*2 I C = 500 mA, IB = 50 mA*2 VCE = 1 V, IC = 150 mA*2
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product V(BR)EBO I CBO hFE* VBE VCE(sat) fT
250 — — —
V V MHz
Notes: 1. The 2SD1306 is grouped by h FE as follows. 2. Pulse test Grade Mark hFE D ND 250 to 500 E NE 400 to 800
See characteristic curves of 2SD1504.
2
2SD1306
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150
100
50
0
100 150 50 Ambient Temperature Ta (°C)
3
2SD1306
Package Dimensions As of January, 2001
Unit: mm
0.65
0……
