器件名称: 2N4918
功能描述: GENERAL.PURPOSE POWER TRANSISTORS
文件大小: 113.84KB 共8页
简 介:ON Semiconductor )
Medium-Power Plastic PNP Silicon Transistors
. . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature:
2N4918 thru 2N4920 *
*ON Semiconductor Preferred Device
Low Saturation Voltage — Excellent Power Dissipation Due to Thermopad Construction —
PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to NPN 2N4921, 2N4922, 2N4923 VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
3 AMPERE GENERAL–PURPOSE POWER TRANSISTORS 40–80 VOLTS 30 WATTS
*MAXIMUM RATINGS
Ratings Symbol VCEO VCB VEB IC* IB 2N4918 40 40 2N4919 60 60 2N4920 80 80 Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 1.0 3.0 1.0 Collector Current — Continuous (1) Base Current Total Power Dissipation @ TC = 25°C Derate above 25_C Operating & Storage Junction Temperature Range PD 30 0.24 Watts W/_C _C TJ, Tstg –65 to +150
3 2 1
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77–09 TO–225AA TYPE
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case θJC 4.16 _C/W *Indicates JEDEC Registered Data for 2N4918 Series. (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current–handling capability of the device (See Figure 5). (2) Recommend use of thermal comp……
