器件名称: 2N4918_04
功能描述: Medium-Power Plastic PNP Silicon Transistors
文件大小: 120.83KB 共6页
简 介:2N4918 2N4920* Series
Preferred Device
MediumPower Plastic PNP Silicon Transistors
These mediumpower, highperformance plastic devices are designed for driver circuits, switching, and amplifier applications.
Features http://onsemi.com
PbFree Package is Available** Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation Due to Thermopad Construction,
PD = 30 W @ TC = 25_C Excellent Safe Operating Area Gain Specified to IC = 1.0 A Complement to NPN 2N4921, 2N4922, 2N4923
3.0 A, 4080 V, 30 W GENERAL PURPOSE POWER TRANSISTORS
MAXIMUM RATINGS
Rating Collector Emitter Voltage 2N4918 2N4919 2N4920 Collector Base Voltage 2N4918 2N4919 2N4920 Emitter Base Voltage Collector Current Continuous (Note 1) Base Current Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC (Note 2) IB PD TJ, Tstg VCBO 40 60 80 5.0 1.0 3.0 1.0 30 0.24 65 to +150 Vdc Adc Adc W W/°C °C xx Y WW = 18, 19, 20 = Year = Work Week Symbol VCEO 40 60 80 Vdc Value Unit Vdc 3 2 1 TO225 CASE 077 STYLE 1
MARKING DIAGRAM
YWW 2N 49xx
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional ……
