器件名称: 2N4399
功能描述: PNP HIGH POWER SILICON TRANSISTOR
文件大小: 57.42KB 共2页
简 介:TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/433 Devices 2N4399 2N5745 Qualified Level JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg Symbol RθJC RθJA
2N4399
60 60 5.0 7.5 30
2N5745
80 80
Unit
Vdc Vdc Vdc Adc Adc W W 0 C Unit
0
@ TA =+ 250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range
20 5.0 115 -55 to +200 Max.
3
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Junction-to-Ambient 1) 0.875 35
TO-3* (TO-204AA)
C/W
2)
Derate linearly @ 28.57 mW/0C for TA > +250C Derate linearly @ 1.15 W/0C for TC > +1000C
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N4399 2N5745 2N4399 2N5745 2N4399 2N5745 V(BR)CEO 60 80 100 100 5.0 5.0 5.0 Vdc
ICEO
Adc
ICEX IEBO
Adc Adc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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2N4399, 2N5745 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTIC……
