器件名称: 2N4399
功能描述: Silicon PNP Power Transistors
文件大小: 126.41KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package ·Complement to type 2N5301/5302/5303 ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in power amplifier and switching circuits applications.
PINNING PIN 1 2 3 Base Emitter DESCRIPTION
2N4398 2N4399 2N5745
Fig.1 simplified outline (TO-3) and symbol Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
固
导体 半 电
PARAMETER
2N4398 2N4399 2N5745
Collector-base voltage
VCEO
INCH
Base current
Collector-emitter voltage
ANG
2N4398 2N4399 2N5745
M E S E
Open emitter
C U D ICON
CONDITIONS
VALUE -40 -60 -80
TOR
UNIT
V
-40 -60 -80 V
Open base
VEBO IC IB PD Tj Tstg
Emitter-base voltage 2N4398/4399 Collector current 2N5745
Open collector
-5 -30
V A
-20 -7.5 TC=25℃ 200 200 -65~200 A W ℃ ℃
Total power dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N4398 VCEO(SUS) Collector-emitter sustaining voltage 2N4399 2N5745 VCEsat-1 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage 2N4398/4399 IC=-10A; IB=-1A 2N5745 2N4398/4399 IC=-15A ;IB=-1.5A 2N5745 2N4398/4399 2N5745 IC=-20A ;IB=-2A IC=-0.2A ;IB=0
2N4398 2N4399 ……
