器件名称: 2SD1137
功能描述: Silicon NPN Triple Diffused
文件大小: 31.1KB 共5页
简 介:2SD1137
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
Rating 100 100 4 4 5 1.8 40 150 –45 to +150
Unit V V V A A W W °C °C
2SD1137
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 100 4 — — 50 25 Collector to emitter saturation voltage Note: 1. Pulse test. VCE (sat) — Typ — — — — — — — Max — — 100 50 250 350 1.0 V Unit V V A A Test conditions I C = 10 mA, RBE = ∞ I E = 1 mA, IC = 0 VCE = 80 V, RBE = ∞ VEB = 3.5 V, IC = 0 VCE = 4 V I C = 0.5 A*1 I C = 50 mA I C = 1 A, IB = 0.1 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio V(BR)EBO I CEO I EBO hFE
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 10
Area of Safe Operation (10 V, 4 A) Collector current IC (A) 3 1.0 0.3 0.1 (100 V, 50 mA) 0.03 0.01 DC Operation TC = 25°C (40 V, 1 A)
40
20
0
50 100 Case temperature TC (°C)
150
1
3 10 30 100 300 1,000 Collector to emitter voltage VCE (V)
2
2SD1137
Typical Output Char……
