器件名称: 2SD1137
功能描述: Silicon NPN Power Transistors
文件大小: 96.01KB 共5页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1137
DESCRIPTION With TO-220C package Complement to type 2SB860 APPLICATIONS Low frequency power amplifier TV vertical deflection output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 40 150 -45~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 4 4 5 1.8 W UNIT V V V A A
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1137
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC=50mA; RBE=∞ MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter breakdown voltage
100
V
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
4
V
VCEsat
Collector-emitter saturation voltage
IC=1 A;IB=0.1 A VCE=80V; RBE=∞
1.0
V Α Α
ICEO
Collector cut-off current
100
IEBO
Collector cut-off current
VEB=3.5V; IC=0
50
hFE-1
DC current gain
IC=0.5A ; VCE=4V
50
250
hFE-2
DC current gain
IC=50mA ; VCE=4V
25
350
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1137
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
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