器件名称: 2SD1134
功能描述: Silicon NPN Triple Diffused
文件大小: 32.92KB 共5页
简 介:2SD1133, 2SD1134
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
2SD1133 70 50 5 4 8 40 150 –45 to +150
2SD1134 70 60 5 4 8 40 150 –45 to +150
Unit V V V A A W °C °C
2SD1133, 2SD1134
Electrical Characteristics (Ta = 25°C)
2SD1133 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO
1
2SD1134 Max — — — 1 320 — 1 1 — Min 70 60 5 — 60 35 — — — Typ — — — — — — — — 7 Max — — — 1 320 — 1 1 — V V MHz Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 50 mA, RBE = ∞ I E = 10 A, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A*2 I C = 0.1 A*2 I C = 2 A, IB = 0.2 A*2 VCE = 4 V, IC = 1 A*2 VCE = 4 V, IC = 0.5 A*2
Min 70 50 5 — 60 35 — — —
Typ — — — — — — — — 7
DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product
VCE(sat) VBE fT
Notes: 1. The 2SD1133 and 2SD1134 are grouped by h FE1 as follows. 2. Pulse test. B 60 to 120 C 100 to 200 D 160 t……