器件名称: 2SD1134
功能描述: Silicon NPN Power Transistors
文件大小: 126.14KB 共4页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1133 2SD1134
DESCRIPTION With TO-220C package Complement to type 2SB857/858 APPLICATIONS For low frequency power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL VCBO PARAMETER Collector-base voltage 2SD1133 VCEO Collector-emitter voltage 2SD1134 VEBO IC ICP PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 60 5 4 8 40 150 -45~150 V A A W CONDITIONS Open emitter VALUE 70 50 V UNIT V
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SD1133 IC=50mA; RBE=; 2SD1134 IC=10A; IE=0 IE=10A; IC=0 IC=2 A;IB=0.2 A IC=1A ; VCE=4V VCB=50V; IE=0 IC=1A ; VCE=4V IC=0.1A ; VCE=4V IC=0.5A ; VCE=4V CONDITIONS
2SD1133 2SD1134
SYMBOL
MIN 50
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V 60 70 5 1.0 1.0 1 60 35 7 MHz 320 V V V V A
V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT
Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency
hFE-1 classifications B 60-120 C 100-200 D 160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Pow……
