器件名称: 2SA778
功能描述: Silicon PNP Epitaxial
文件大小: 106.78KB 共7页
简 介:2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Application
High voltage medium speed switching
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA778(K) –150 –150 –5 –50 200 150 –55 to +150 2SA778A(K) –180 –180 –5 –50 200 150 –55 to +150 Unit V V V mA mW °C °C
REJ03G0628-0300 Rev.3.00 Jul 30, 2007 Page 1 of 7
2SA778(K), 2SA778A(K)
Electrical Characteristics
(Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Collector output capacitance Gain bandwidth product Turn on time Turn off time Storage time Symbol V(BR)CBO V(BR)CER ICBO IEBO hFE VCE(sat) VBE(sat) Cob fT ton toff tstg 2SA778(K) Min Typ Max –150 — — –150 — — — 30 — — — — — — — — — — — 100 –0.3 –0.77 — 50 135 1.7 — — –1.0 — –1.0 — –1.0 –1.0 10 — — — 1.0 2SA778A(K) Min Typ Max –180 — — –180 — — — 40 — — — — — — — — — — — 100 –0.3 –0.77 — 50 135 1.7 — — — –1.0 –1.0 200 –1.0 –1.0 10 — — — 1.0 Unit V V A A A Test conditions IC = –50 A, IE = 0 IC = –50 A, RBE = 30 k VCB = –100 V, IE = 0 VCB = –150 V, ……