器件名称: 2SA778A
功能描述: Silicon PNP Epitaxial
文件大小: 42.67KB 共8页
简 介:2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
Application
High voltage medium speed switching
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA778(K), 2SA778A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA778(K) –150 –150 –5 –50 200 150 –55 to +150 2SA778A(K) –180 –180 –5 –50 200 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
2SA778(K) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CER I CBO Min Typ Max — — –1.0 — –1.0 — –1.0 2SA778A(K) Min Typ Max — — — –1.0 –1.0 200 –1.0 V V pF MHz ns s s Unit V V A A A Test conditions I C = –50 A, IE = 0 I C = –50 A, RBE = 30 k VCB = –100 V, IE = 0 VCB = –150 V, IE = 0 VEB = –5 V, IC = 0 VCE = –3 V, I E = –15 mA I C = –15 mA, I B = –1 mA I C = –15 mA, I B = –1 mA VCB = –10 V, IE = 0, f = 1 MHz VCE = –3 V, I C = –15 mA VCC = –10.3 V I C = 10 IB1 = –10 I B2 = –10 mA VCC = –10 V, I C =–17 mA IB1 = –1mA, I B2 = –12 mA
–150 — –150 — — — — — — 100 –0.3
–180 — –180 — — — — 40 — — — — — — — — — — 100 –0.3
Emitter cutoff current
I EBO
— 30 — — — — — — —
DC current transfer ratio hFE Collector to emitter saturation voltage Base to emitter saturation voltage Collector output capacitance VCE(sat) VBE(sat) Cob
–0.77 –1.0 — ……
