器件名称: 2SC3322
功能描述: Silicon NPN Triple Diffused
文件大小: 45.49KB 共7页
简 介:2SC3322
Silicon NPN Tirple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1. Base 2. Collector (Flange) 3. Emitter
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2
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Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) IB PC* Tj Tstg
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Ratings 900 800 7 5 10 2.5 80 150 –55 to +150
Unit V V V A A A W °C °C
2SC3322
Electrical Characteristics (Ta = 25°C)
Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 800 800 Typ — — Max — — Unit V V Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 4 A, IB1 = 1.5 A, IB2 = –0.8 A, VBE = –5.0 V, L = 180 H, Clamped IE = 10 mA, IC = 0 VCB = 750 V, IE = 0 VCE = 650 V, RBE = ∞ VCE = 5 V, IC = 0.5 A* VCE = 5 V, IC = 3 A* V V s s s IC = 3 A, IB1 = 0.6 A, IB2 = –1.5 A, VCC 250 V
1 1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) VBE(sat) ton tstg tf
7 — — 15 7 — — — — —
— — — — — — — — — —
— 100 100 — — 1.0 1.5 1.0 3.0 1.0
V A A
DC current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
IC = 1.5 A, IB = 0.3 A*
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2SC3322
Maximum Collector Dissipation Curve 120 Collector power dissipation Pc (W)
80
40
0
50 100……
