器件名称: 2SC3322
功能描述: Silicon NPN Power Transistors
文件大小: 121.04KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3322
DESCRIPTION ·With TO-3P(I) package ·High voltage ·High speed APPLICATIONS ·High power switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg
固电
Collector-base voltage
体 导 半
PARAMETER
A H C IN
Collector current Base current
Collector-emitter voltage
Emitter-base voltage
S E NG
Open emitter
Open base
C I M E
CONDITIONS
OND
R O T UC
VALUE 900 800 7 5 10 2.5
UNIT V V V A A A W ℃ ℃
Open collector
Collector current-peak
Total power dissipation Junction temperature Storage temperature
TC=25℃
80 150 -55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE sat ICBO ICEO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=0.2A ,L=100mH;RBE=∞ IE=10mA; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=750V; IE=0 VCE=650V; RBE=∞ IC=0.5A ; VCE=5V IC=3A ; VCE=5V 15 7 MIN 800 7 TYP.
2SC3322
MAX
UNIT V V
1.0 1.5 100 100
V V μA μA
Switching times ton tstg tf
固电
Fall time
Turn-on time
体 导 半
A H C IN
Sto……
