器件名称: FZT968
功能描述: SOT223 PNP SILICON PLANAR HIGH CURRENT
文件大小: 109.52KB 共2页
简 介:SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage PARTMARKING DETAIL FZT968
FZT968
C
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg MIN. -15 -12 -6 TYP. -28 -20 -8 -10 -1.0 -10 -65 -132 -360 -1050 -870 300 300 200 150 450 450 300 240 50 80 161 120 116 -130 -170 -450 -1200 -1050 1000 MAX. VALUE -15 -12 -6 -20 -6 3 -55 to +150 UNIT V V V
A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE
UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-12V VCB=-12V, Tamb=100°C VEB=-6V IC=-500mA, IB=-5mA* IC=-2A, IB=-50mA* IC=-6A, IB=-250mA* IC=-6A, IB=-250mA* IC=-6A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-500mA, VCE=-1V* IC=-5A, VCE=-1V* IC=-10A, VCE=-1V* IC=-20A, VCE=-1V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-4A, IB1=-400mA ……
