器件名称: FZT968
功能描述: PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR
文件大小: 97.63KB 共2页
简 介:FZT968 FZT968
C
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR
TYPICAL CHARACTERISTICS
I+/I*=50
0.8
+25 °C
0.8
ISSUE 3 OCTOBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) 44m at 5A * 6 Amps continuous current (Up to 20 Amps peak ) * High gain and very low saturation voltage PARTMARKING DETAIL FZT968
+100 °C +25 °C -55 °C
0.6
0.6
E C B SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -15 -12 -6 -20 -6 3 -55 to +150 UNIT V V V A A W °C
0.4
I+/I*=250 I+/I*=200 I+/I*=100 I+/I*=50 I+/I*=10
0.4
0.2
0.2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
1m 10m 100m 1 10 100
0
0
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Breakdown Voltages SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO MIN. -15 -12 -6 ICBO IEBO VCE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 300 300 200 150
1m
10m
100m
1
10
100
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
I+/I*=50
VCE(sat) v IC
800
V+-=1V
1.6
-55 °C +25 °C +100 °C
600
+100 °C
1.2
400
+25 °C
0.8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
TYP. -28 -20 -8 -10 -1.0 -10 -65 -132 -360 Collector-Emitter Saturation Voltage -1050 -870 -130 -170 -450 -1200 -1050 1000 MAX. UNIT V V V
A
CONDITIONS. IC=-100A IC=-10mA* IE=-1……
