器件名称: FZT757
功能描述: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
文件大小: 102.14KB 共2页
简 介:SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757
FZT757
C
E C B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL MIN. V(BR)CBO V(BR)CEO -300 -300 -5 -0.1 -0.1 -0.5 -1.0 -1.0 40 50 30 20 MHz pF SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. VALUE -300 -300 -5 -1 -0.5 2 -55 to +150 UNIT V V V
A A
UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-200V VEB=-3V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-5V* IC=-100mA, VCE =-5V* IC=-10mA, VCE =-20V f=20MHz VCB=-20V, f=1MHz Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo
V V V
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 240
FZT757
TYPICAL CHARACTERISTICS
td tr ts tf s
25……
