器件名称: FZT757
功能描述: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
文件大小: 90.47KB 共2页
简 介:FZT757
C
SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
FZT757
TYPICAL CHARACTERISTICS
IB1=IB2=IC /10 VC E=10V
td
tr
ISSUE 4 JANUARY 1996 FEATURES * Low saturation voltage * 300V VCEO
ts
tf
250
s
s
4
1.6
E C B
IC /IB=10
1.4
200
ts
COMPLEMENTARY TYPE - FZT657 PARTMARKING DETAIL - FZT757
- (mV)
3
1.2
1.0 tf
2 td
0.8
150
V
0.6
ABSOLUTE MAXIMUM RATINGS.
tr
Switching time
1 tf ts tr 0.1 1 td
0.4
100
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCEO VEBO ICM IC Ptot Tj:Tstg VCBO
SYMBOL
VALUE -300 -300 -5 -1 -0.5 2 -55 to +150
UNIT V V V A A W °C
0.2
0
0.0001
0.001
0.01
0.1
1
0.01
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
Switching Speeds
100
1.2
80 IC /IB =10
1.0
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO -300 -300 -5 ICBO Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VCE(sat) VBE(sat) VBE(on) hFE
1000
VCE=5V
- (Volts)
60
0.8
V V V -0.1
A
40
IC=-100A IC=-10mA* IE=-100A VCB=-200V
0.6
- Normalised Gain (%)
20
V
0.4
h
0 0.0001 0.001 0.01 0.1 1
0.0001
0.001……
