器件名称: FZT957
功能描述: SOT223 PNP SILICON PLANAR HIGH CURRENT
文件大小: 114.11KB 共5页
简 介:SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp COMPLEMENTARY TYPES PARTMARKING DETAILS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range FZT957 - FZT857 FZT958 - N/A DEVICE TYPE IN FULL SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -2 -1 3 -55 to +150 FZT957 -300 -300 -6
FZT957 FZT958
C
E C B
ABSOLUTE MAXIMUM RATINGS.
FZT958 -400 -400 UNIT V V V -1.5 -0.5 A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
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FZT957
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1k IEBO VCE(sat) -60 -110 -170 -910 -750 100 100 90 200 200 170 10 85 23 108 2500 MIN. -330 -330 -300 -6 TYP. -440 -440 -400 -8 -50 -1 -50 -1 -10 -1……
