器件名称: FZT957
功能描述: PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
文件大小: 101.71KB 共5页
简 介:SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
FZT957 FZT958
C
ISSUE 3 - JANUARY 1996 FEATURES * 1 Amp continuous current * Up to 2 Amps peak current * Very low saturation voltage * Excellent gain characteristics specified up to 1 Amp COMPLEMENTARY TYPES PARTMARKING DETAILS -
E C B FZT957 - FZT857 FZT958 - N/A DEVICE TYPE IN FULL SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -2 -1 3 -55 to +150 FZT957 -300 -300 -6 -1.5 -0.5 FZT958 -400 -400
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range UNIT V V V A A W °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum
3 - 289
FZT957
TYPICAL CHARACTERISTICS
Tamb=25°C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 0 0.01 0.1 1 I+ - Collector Current (Amps) 10 20 IC/IB=5
FZT957
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
MAX. V IC=-100A
1.6 1.4 1.0 0.8 0.6 0.4 0.2 0 IC/IB=5 IC/IB=20 -55°C +25°C +175°C
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base Breakdown Voltage
- (Volts)
1.2
V(BR)CBO
- (Volts)
-330 V IC=-1A, RB ≤1k IC=-10mA*
V
-440
Collector-Emitter Breakdown Voltage V V IE=-100A VCB=-300V VCB=-300V, Tamb=100°C VCB=-300V VCB=-300V, Tamb=100°C VEB=-6V
1.6 1.4 1.2 1.0 0……
