器件名称: SI1012X
功能描述: N-Channel 1.8-V (G-S) MOSFET
文件大小: 94.59KB 共6页
简 介:Si1012R/X
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
FEATURES
ID (mA)
600 500 350
rDS(on) (W)
0.70 @ VGS = 4.5 V 0.85 @ VGS = 2.5 V 1.25 @ VGS = 1.8 V
D D D D D D
TrenchFETr Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000 V High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Switching Speed: 10 ns
Pb-free Available
SC-75A or SC-89
G 1
BENEFITS
D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
3 S 2 Top View
D
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Part Number
Si1012R-T1 Si1012R-T1—E3 (Lead (Pb)-Free) Si1012X-T1 Si1012X-T1—E3 (Lead (Pb)-Free)
Package
SC75A (SOT-416) SC-89 (SOT-490)
Marking Code
C A
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 SC 75 TA = 25_C TA = 85_C TA = 25_C TA = 85_C TJ, Tstg ESD PD TA = 25_C TA = 85_C
Symbol
VDS VGS ID IDM IS
5 secs
20
Steady State
"6
Unit
V
600 400 1000 275 175 90 275 160 55 to 150 2000
500 350 mA
250 150 80 250 140 _C V mW
Maximum Power Dissipationb for SC-89 SC 89 Operating Junction and Storage Temp……
